Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2003-02-04
2008-08-12
Jackson, Jr., Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S315000, C257SE29300, C257SE29304, C257SE29306
Reexamination Certificate
active
07411246
ABSTRACT:
A method of forming an array of floating gate memory cells, and an array formed thereby, that includes source and drain regions formed in a substrate, and a conductive block of material disposed over the source region. The floating gate is formed as a thin, L-shaped layer of conductive material having a first portion disposed over the channel region and a second portion extending vertically along the conductive block. The control gate includes a first portion disposed adjacent to and insulated from a distal end of the floating gate first portion, and a second portion disposed adjacent to the channel region. A portion of the control gate could extend into a trench formed into the substrate, wherein the drain region is formed underneath the trench, and the channel region has a first portion extending along the trench sidewall and a second portion extending along the substrate surface.
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DLA Piper (US) LLP
Jackson, Jr. Jerome
Silicon Storage Technology, Inc.
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