Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-12-01
2008-08-26
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S300000, C257S305000, C257S336000, C257S403000, C257SE29345
Reexamination Certificate
active
07417277
ABSTRACT:
Conventional capacitors constituted of a FET incur degradation in frequency response. A semiconductor integrated circuit includes a semiconductor substrate, an N-type FET, a P-type FET, and capacitors. The N-type FET includes N-type impurity diffusion layers, a P-type impurity-implanted region, a gate insulating layer, and a gate electrode. The P-type FET includes P-type impurity diffusion layers, an N-type impurity-implanted region, a gate insulating layer, and a gate electrode. The capacitor includes N-type impurity diffusion layers, an N-type impurity-implanted region, a capacitance insulating layer, and an upper electrode. The capacitor includes P-type impurity diffusion layers, a P-type impurity-implanted region, a capacitance insulating layer, and an upper electrode.
REFERENCES:
patent: 6121650 (2000-09-01), Akamatsu
patent: 6291307 (2001-09-01), Chu et al.
patent: 7176530 (2007-02-01), Bulucea et al.
patent: 2001-044283 (2001-02-01), None
patent: 2004-055954 (2004-02-01), None
Nakashiba Yasutaka
Ohkubo Hiroaki
Huynh Andy
McGinn IP Law Group PLLC
NEC Electronics Corporation
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