Static information storage and retrieval – Read/write circuit – Differential sensing
Reexamination Certificate
2006-06-30
2008-10-28
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Read/write circuit
Differential sensing
C365S227000, C365S233500, C365S207000, C365S189060
Reexamination Certificate
active
07443752
ABSTRACT:
A semiconductor memory device includes an I/O line, a first sense amplifier connected to the first I/O line to amplify a signal applied on the first I/O line in response to a first control signal, a second sense amplifier for amplifying an output signal of the first sense amplifier in response to a second control signal, and a disabling unit for disabling the first control signal in response to an output signal of the second sense amplifier.
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Hoang Huan
Hynix / Semiconductor Inc.
McDermott Will & Emery LLP
Radke Jay
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