Method for producing an SOI field effect transistor

Details Method for producing an SOI field effect transistor Method for producing an SOI field effect transistor

2004-09-23

2008-08-26

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S163000, C438S230000, C438S303000

Reexamination Certificate

active

07416927

ABSTRACT:
Method for producing a first SOI field effect transistor with predetermined transistor properties by forming a laterally delimited layer sequence with a gate-insulating layer and a gate region on an undoped substrate, forming a spacer layer having a predetermined thickness, on at least a portion of the sidewalls of the laterally delimited layer sequence, and forming two source/drain regions having a predetermined dopant concentration profile, by introducing dopant into two surface regions of the substrate which are adjoined by the spacer layer, the layer sequence and the spacer layer forming a shading structure that prevents dopant from being introduced into a surface region of the substrate between the two source/drain regions, wherein the predetermined transistor properties of the first SOI field effect transistor are set by setting the thickness of the spacer layer and by setting the dopant concentration profile.

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