Top drain MOSgated device and process of manufacture therefor

Details Top drain MOSgated device and process of manufacture therefor Top drain MOSgated device and process of manufacture therefor

2005-09-01

2008-10-21

Nguyen, Dao H (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S328000, C257S329000, C257S331000, C257SE21538, C257SE21661

Reexamination Certificate

active

07439580

ABSTRACT:
A trench type top drain MOSgated device has a drain electrode on the die top and a source electrode on the die bottom surface. The device is turned on by a control voltage connected between a drain and a gate region. The device cell has a body short trench and a gate trench. Gate poly is disposed in the bottom of the gate trench and is disposed adjacent a thin gate oxide lining a channel region with minimum overlap of the drain drift region. The bottom of the body short trench contains a contact which shorts the body region to the channel region. The body short, top drain region and gate polysilicon are simultaneously silicided. The gate trench is widened at its top to improve Qgdcharacteristics. Both the body short trench and gate trench are simultaneously filled with gap fill material.

REFERENCES:
patent: 5023196 (1991-06-01), Johnsen et al.
patent: 5134448 (1992-07-01), Johnsen et al.
patent: 5760440 (1998-06-01), Kitamura et al.
patent: 2005/0173741 (2005-08-01), Spring
patent: 2005/0194636 (2005-09-01), Kinzer
patent: 0440394 (1991-01-01), None
patent: 03185737 (1991-08-01), None
Office Action issued in corresponding Japanese Application No. 2005-255650 dated Mar. 11, 2008.

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