Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-12-19
2008-10-14
Schillinger, Laura M (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S410000, C257S412000
Reexamination Certificate
active
07436034
ABSTRACT:
A compound metal comprising MOxNywhich is a p-type metal having a workfunction of about 4.75 to about 5.3, preferably about 5, eV that is thermally stable on a gate stack comprising a high k dielectric and an interfacial layer is provided as well as a method of fabricating the MOxNycompound metal. Furthermore, the MOxNymetal compound of the present invention is a very efficient oxygen diffusion barrier at 1000° C. allowing very aggressive equivalent oxide thickness (EOT) and inversion layer thickness scaling below 14 Å in a p-metal oxide semiconductor (PMOS) device. In the above formula, M is a metal selected from Group IVB, VB, VIB or VIIB of the Periodic Table of Elements, x is from about 5 to about 40 atomic % and y is from about 5 to about 40 atomic %.
REFERENCES:
patent: 6858906 (2005-02-01), Lee et al.
patent: 7297586 (2007-11-01), Triyoso et al.
patent: 2004/0256700 (2004-12-01), Doris et al.
patent: 2005/0093104 (2005-05-01), Ieong et al.
patent: 2005/0116290 (2005-06-01), de Souza et al.
patent: 2005/0224897 (2005-10-01), Chen et al.
patent: 2006/0166425 (2006-07-01), Triyoso et al.
patent: 2006/0172516 (2006-08-01), Adetutu et al.
patent: 2007/0138578 (2007-06-01), Callegari et al.
patent: 2007/0284677 (2007-12-01), Chang et al.
patent: 1594644 (2005-03-01), None
patent: 2007173796 (2007-07-01), None
Cartier, E. et al., “Systematic Study of pFET VtWith Hf-Based Gate Stacks With Poly-Si and FUSI Gates.” IEEE, p. 44-45, (2004).
Gusev, E. P. et al., “Advanced Gate Stacks With Fully Silicided (FUSI) Gates and High-k Dielectrics: Enhanced Performance at Reduced Gate Leakage.” IEEE p. 79-82 (2004).
Callegari Alessandro C.
Gribelyuk Michael A.
Narayanan Vijay
Paruchuri Vamsi K.
Zafar Sufi
International Business Machines - Corporation
Schillinger Laura M
Scully , Scott, Murphy & Presser, P.C.
Trepp, Esq. Robert M.
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