Semiconductor device and fabrication method for the same

Details Semiconductor device and fabrication method for the same Semiconductor device and fabrication method for the same

2006-12-28

2008-10-14

Smith, Zandra (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S059000, C257S072000, C257S352000, C438S401000

Reexamination Certificate

active

07436027

ABSTRACT:
In a semiconductor device including a monocrystalline thin film transistor16athat has been formed on a monocrystalline Si wafer100and then is transferred to a insulating substrate2, LOCOS oxidization is performed with respect to the element-isolation region of the monocrystalline Si wafer100so as to create a field oxide film (SiO2film)104, and a marker107is formed on the field oxide film104. With this structure, alignment of components may be performed based on a gate electrode106upon or after the transfer step.

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