Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2006-11-22
2008-10-14
Lee, Hsien-ming (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S082000, C257S090000, C438S046000
Reexamination Certificate
active
07435994
ABSTRACT:
A spacer layer is formed on a single-crystal substrate and an epitaxially grown layer composed of a group III-V compound semiconductor layer containing a nitride or the like is further formed on the spacer layer. The epitaxially grown layer is adhered to a recipient substrate. The back surface of the single-crystal substrate is irradiated with a light beam such as a laser beam or a bright line spectrum from a mercury vapor lamp such that the epitaxially grown layer and the single-crystal substrate are separated from each other. Since the forbidden band of the spacer layer is smaller than that of the single-crystal substrate, it is possible to separate the thin semiconductor layer from the substrate by decomposing or fusing the spacer layer, while suppressing the occurrence of a crystal defect or a crack in the epitaxially grown layer.
REFERENCES:
patent: 5539206 (1996-07-01), Schimert
patent: 5895223 (1999-04-01), Peng et al.
patent: 6071795 (2000-06-01), Cheung et al.
patent: 6559075 (2003-05-01), Kelly et al.
patent: 6596079 (2003-07-01), Vaudo et al.
patent: 2001/0050531 (2001-12-01), Ikeda
patent: 2003/0080343 (2003-05-01), Tominaga
patent: 2000-91632 (2000-03-01), None
patent: 2000-101139 (2000-04-01), None
patent: 2001-501778 (2001-02-01), None
patent: 2001-119104 (2001-04-01), None
patent: WO 98/14986 (1998-04-01), None
Kelly et al. “Large Free-Standing GaN Substrates By Hydride Vapor Phase Epitaxy and Laser-Induced Liftoff”, Jpn. J. Appl. Phys. 1999, pp. L217-L219, vol. 38.
Lee Hsien-ming
Matsushita Electric - Industrial Co., Ltd.
McDermott Will & Emery LLP
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