Image sensor pixel having photodiode with indium pinning layer

Details Image sensor pixel having photodiode with indium pinning layer Image sensor pixel having photodiode with indium pinning layer

2004-12-03

2008-10-07

Vu, Hung (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S233000, C257S290000

Reexamination Certificate

active

07432543

ABSTRACT:
An active pixel using a pinned photodiode with a pinning layer formed from indium is disclosed. The pixel comprises a photodiode formed in a semiconductor substrate. The photodiode is an N−region formed within a P-type region. A pinning layer formed from indium is then formed at the surface of the N−region. Further, the pixel includes a transfer transistor formed between the photodiode and a floating node and selectively operative to transfer a signal from the photodiode to the floating node. Finally, the pixel includes an amplification transistor controlled by the floating node.

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EP 1667 232 A3, European Search Report, dated May 11, 2007.

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