Methods of fabricating integrated circuitry

Details Methods of fabricating integrated circuitry Methods of fabricating integrated circuitry

2002-11-18

2008-09-02

Walke, Amanda C. (Department: 1752)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

C430S314000, C430S318000, C430S322000, C430S323000, C430S324000, C430S325000, C430S331000, C134S028000

Reexamination Certificate

active

07419768

ABSTRACT:
The invention includes methods of fabricating integrated circuitry and semiconductor processing polymer residue removing solutions. In one implementation, a method of fabricating integrated circuitry includes forming a conductive metal line over a semiconductor substrate. The conductive line is exposed to a solution comprising an inorganic acid, hydrogen peroxide and a carboxylic acid buffering agent. In one implementation, a method of fabricating integrated circuitry includes forming an insulating layer over a semiconductor substrate. A contact opening is at least partially formed into the insulating layer. The contact opening is exposed to a solution comprising an inorganic acid, hydrogen peroxide and a carboxylic acid buffering agent. In one implementation, a semiconductor processing polymer residue removing solution comprises an inorganic acid, hydrogen peroxide and a carboxylic acid buffering agent. Other aspects and implementations are contemplated.

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