Strained HOT (hybrid orientation technology) MOSFETs

Details Strained HOT (hybrid orientation technology) MOSFETs Strained HOT (hybrid orientation technology) MOSFETs

2006-05-19

2008-10-21

Nguyen, Ha (Department: 2829)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C257S064000, C257S350000, C257SE33003, C257S627000, C438S526000

Reexamination Certificate

active

07439110

ABSTRACT:
A strained HOT MOSFET fabrication method. The MOSFET fabrication method includes providing a semiconductor structure which includes (a) a first semiconductor layer having a first crystallographic orientation, (b) a buried insulating layer on top of the first semiconductor layer, (c) a second semiconductor layer on top of the buried oxide layer. The second semiconductor layer has a second crystallographic orientation different from the first crystallographic orientation. The method further includes forming a third semiconductor layer on top of the first semiconductor layer which has the first crystallographic orientation. The method further includes forming a fourth semiconductor layer on top of the third semiconductor layer. The fourth semiconductor layer (a) comprises a different material than that of the third semiconductor layer, and (b) has the first crystallographic orientation.

REFERENCES:
patent: 7119400 (2006-10-01), Burden
patent: 7199451 (2007-04-01), Kelman
patent: 2007/0238233 (2007-10-01), Sadaka et al.

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