Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2007-02-06
2008-09-16
Deo, Duy-Vu N (Department: 1792)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S714000, C438S725000, C216S067000, C216S076000, C134S001100
Reexamination Certificate
active
07425510
ABSTRACT:
Methods of cleaning a processing chamber of semiconductor device fabrication equipment are highly effective in removing polymers produced as a by-product of a fabrication process from surfaces in a processing chamber. The cleaning process uses a plasma etchant produced from cleaning gas including an O-based gas and at least one gas selected from the group consisting of an F-based gas and a Cl-based gas. The polymer is dissolved in-situ using the plasma etchant. Thus, frequency at which PM (preventative maintenance) of the equipment must be performed is minimized, and the method contributes to maximizing the yield and quality of the semiconductor devices.
REFERENCES:
patent: 5254505 (1993-10-01), Kamiyama
patent: 5667917 (1997-09-01), Edwards et al.
patent: 6426911 (2002-07-01), Lehmann et al.
patent: 2005/0087297 (2005-04-01), Kitsunai et al.
patent: 2005/0130427 (2005-06-01), Won et al.
patent: 2005/0201165 (2005-09-01), Ashizawa
patent: 2005/0276369 (2005-12-01), Mataguchi
patent: 2007/0010096 (2007-01-01), Shin et al.
Deo Duy-Vu N
Samsung Electronics Co,. Ltd.
Volentine & Whitt PLLC
LandOfFree
Methods of cleaning processing chamber in semiconductor... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Methods of cleaning processing chamber in semiconductor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of cleaning processing chamber in semiconductor... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3988303