Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-08-11
2008-10-14
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S374000, C257S501000, C257S506000, C257SE29020
Reexamination Certificate
active
07436023
ABSTRACT:
A semiconductor component having a drift path (2) which is formed in a semiconductor body (1), is composed of a semiconductor material of first conductance type. The drift path (2) is arranged between at least one first and one second electrode (3, 4) and has a trench structure in the form of at least one trench (18). A dielectric material which is referred to as a high-k material and has a relative dielectric constant εrwhere εr≧20 is arranged in the trench structure such that at least one high-k material region (5) and one semiconductor material region (6) of the first conductance type are arranged in the area of the drift path (2).
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PCT International Preliminary Report on Patentability w/English translation, PCT/DE2005/000241, 10 pages, Mailing Date Oct. 12, 2006.
Hirler Franz
Mauder Anton
Pfirsch Frank
Coats & Bennett P.L.L.C.
Infineon - Technologies AG
Pert Evan
Tran Tan N
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