Method of producing low-resistant, monocrystalline metallic laye

Details Method of producing low-resistant, monocrystalline metallic laye Method of producing low-resistant, monocrystalline metallic laye

1981-01-02

1982-09-28

Smith, John D.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

427 38, 427 88, 427 91, 427124, 427250, C30B 102, C30B 2902, H01L 21283

Patent

active

043516955

ABSTRACT:
Monocrystalline metal layers having a low specific electrical resistance (.rho.<15.mu..OMEGA. cm) are produced by depositing a layer of a select metal or alloy in its polycrystalline state onto a substrate useful in semiconductor and thin film technologies, such as composed of glass, ceramic or silicon; substantially simultaneously with the deposition or thereafter, implanting ions which are inert relative to the metal or alloy so as to generate crystal lattice disruptions in the deposited layer and thereafter heating the so-coated substrate so as to convert the polycrystalline layer into its monocrystalline state. The principles of the invention are particularly applicable for the production of lead structures in micro-electronics.

REFERENCES:
patent: 3585088 (1971-06-01), Schwuttke et al.
patent: 4214918 (1980-07-01), Gat et al.
patent: 4258078 (1981-03-01), Celler
O'Connell, "Formation of Resistive Films by Ion Bombardment" Colloquium on Ion Implantation, London, England, Jan. 1970.
Dudonis et al., "Influence of Ion Bombardment on the Properties of Vacuum Evaporated Thin Films", Thin Solid Films, 36, No. 1, pp. 117-120, 1976.
D. R. Denison et al., Technical Report No. 79.02 Perkin-Elmer Ultek Division, Apr. 1979, pp. 1-8.
F. d'Heurle et al., Applied Physics Letters, vol. 16, Jan. 1970, pp. 80-81.

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