Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-04-26
2008-09-30
Mai, Anh D. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S372000, C257S408000, C257SE21335
Reexamination Certificate
active
07429771
ABSTRACT:
A MIS-type semiconductor device includes a p-type semiconductor substrate, a gate insulating film formed on the semiconductor substrate, a gate electrode formed on the gate insulating film, and n-type diffused source and drain layers formed in regions of the semiconductor substrate located below both sides of the gate electrode. Insides of the n-type diffused source and drain layers are formed with p-type impurity implanted regions having a lower p-type impurity concentration than the impurity concentration of the n-type diffused source and drain layer.
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Japanese Office Action with English Translation issued in Japanese Patent Application No. JP 2004-366568 dated on Apr. 1, 2008.
Mai Anh D.
McDermott Will & Emery LLP
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