Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2003-09-22
2008-05-06
Sefer, A. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S101000, C257S103000, C257SE31063, C257SE31116, C257SE31128, C257SE31061, C257SE31114
Reexamination Certificate
active
07368750
ABSTRACT:
A semiconductor light-receiving device includes: a semi-insulating substrate; a semiconductor layer of a first conduction type that is formed on the semi-insulating substrate; a buffer layer of the first conduction type that is formed on the semi-insulating substrate and has a lower impurity concentration than the semiconductor layer of the first conduction type; a light absorption layer that is formed on the buffer layer and generates carriers in accordance with incident light; a semiconductor layer of a second conduction type that is formed on the light absorption layer; and a semiconductor intermediate layer that is interposed between the buffer layer and the light absorption layer, and has a forbidden bandwidth within a range lying between the forbidden bandwidth of the buffer layer and the forbidden bandwidth of the light absorption layer.
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Japanese Office Action dated May 8, 2007.
Wang Gang
Yoneda Yoshihiro
Fujitsu Quantum Devices Limited
Kratz Quintos & Hanson, LLP
Sefer A.
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