Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-02-09
2008-09-23
Luu, Chuong Anh (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S384000, C257S385000, C257S377000
Reexamination Certificate
active
07427796
ABSTRACT:
A semiconductor device according to an embodiment of the present invention comprises a first transistor including: a first source layer and a first drain layer both formed in one surface of a semiconductor substrate; a first silicide layer formed on the first source layer and the first drain layer; a first gate electrode formed on a first gate insulating film formed on the surface of the semiconductor substrate and having a second silicide layer; and a silicon nitride film formed on the sidewall of the first gate electrode; a second transistor including: a second source layer and a second drain layer both formed in the surface of the semiconductor substrate; a third silicide layer formed on the second source layer and the second drain layer and equal in thickness to the first silicide layer; a second gate electrode formed on a second gate insulating film formed on the surface of the semiconductor substrate and having a fourth silicide layer thinner in thickness than the second silicide layer.
REFERENCES:
patent: 7112483 (2006-09-01), Lin et al.
J. Kedzierski et al., “Issues in NiSi-gated FDSOI Device Integration”, IEDM Tech. Digest, 2003, pp. 441-444.
Foley & Lardner LLP
Luu Chuong Anh
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