Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2003-02-26
2008-09-30
Ngo, Ngan (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S239000, C257S291000, C257S296000, C257S298000, C257SE31003, C257SE31032, C257SE31112
Reexamination Certificate
active
07429764
ABSTRACT:
A signal processing device is provided which is capable of suppressing a voltage change of a power supply when output signals from a plurality of signal sources are read, and capable of outputting a stable signal at a high sensitivity, and an image pickup apparatus using such a signal processing device is also provided. The signal processing device has: a plurality of terminals connectable to a plurality of signal sources; and a read circuit for converting signals input from the terminals into serial signals and outputting the serial signals, wherein: the read circuit comprises a holding capacitor connected to each of the terminals, a transfer switch for transferring a signal held in the holding capacitor to a common signal line, and a shift register for driving the transfer switch; and a semiconductor layer under the common signal line has a conductivity type opposite to a first conductivity type of a semiconductor substrate.
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The Examiner's attention is also directed to the following U.S. Appl. No. 09/678,296, filed Oct. 3, 2000.
Japanese Official Letter issued on Jan. 9, 2007 in counterpart application 2003-045869 and partial translation.
Fujimura Masaru
Hiyama Hiroki
Koizumi Toru
Sakurai Katsuhito
Canon Kabushiki Kaisha
Fitzpatrick ,Cella, Harper & Scinto
Ngo Ngan
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