Photolithographic patterning process using a carbon hard...

Details Photolithographic patterning process using a carbon hard... Photolithographic patterning process using a carbon hard...

2002-10-29

2008-05-06

Estrada, Michelle (Department: 2823)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S700000, C438S708000, C438S709000, C438S717000, C438S724000, C438S738000, C257SE21027, C257SE21035

Reexamination Certificate

active

07368390

ABSTRACT:
A carbon hard mask layer is applied to a substrate to be patterned by means of a plasma-enhanced deposition process in such a manner that it has a hardness comparable to that of diamond in at least one layer thickness section. During the production of this diamond-like layer thickness section, the parameters used in the deposition are set in such a manner that growth regions which are produced in a form other than diamond-like are removed again in situ by means of subsequent etching processes and that diamond-like regions which are formed are retained.

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