Thin film transistor and method of fabricating the same

Details Thin film transistor and method of fabricating the same Thin film transistor and method of fabricating the same

2004-12-15

2008-09-09

Nguyen, Tuan H (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S353000

Reexamination Certificate

active

07423322

ABSTRACT:
A bottom gate thin film transistor and method of fabricating the same are disclosed, in which a channel region is crystallized by a super grain silicon (SGS) crystallization method, including: forming a gate electrode and a gate insulating layer on an insulating substrate; forming an amorphous silicon layer on the gate insulating layer followed by forming a capping layer and a metal catalyst layer; performing heat treatment to crystallize the amorphous silicon layer into a polysilicon layer; and forming an etch stopper, source and drain regions and source and drain electrodes. The thin film transistor includes: an insulating substrate; a gate electrode formed on the substrate; a gate insulating layer formed on the gate electrode; a polysilicon layer formed on the gate insulating layer and crystallized by an SGS crystallization method; and source and drain regions and source and drain electrodes formed in a predetermined region of the substrate.

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Chinese Office Action dated Jan. 4, 2008.

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