Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2006-03-16

2008-03-25

Wojciechowicz, Edward (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S372000, C257S374000

Reexamination Certificate

active

07348637

ABSTRACT:
A semiconductor device including plural CMOS transistors with first and second transistors sharing a common first gate electrode and third and fourth transistors sharing a common second gate electrode that is adjacent and parallel to the first gate electrode. The first and third transistors share a common n-type channel MOS region and the second and fourth transistors share a common p-type channel MOS region. The semiconductor device has a wire connecting the n-type channel MOS region and the p-type channel MOS region. The wire has a width greater than a distance between the first and second adjacent gate electrodes, and a portion of the wire is disposed right above a portion of at least one of the first and second gate electrodes with an insulating film interposed therebetween.

REFERENCES:
patent: 5220218 (1993-06-01), Hill et al.
patent: 5338699 (1994-08-01), Ohi et al.
patent: 5899742 (1999-05-01), Sun
patent: 6174775 (2001-01-01), Liaw
patent: 7038281 (2006-05-01), Ashida et al.

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