Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-02-13
2008-03-04
Quach, T. N. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S350000, C257S378000, C257S409000, C257SE29255, C257SE29174, C257SE29197, C257SE21415, C438S197000, C438S202000, C438S479000
Reexamination Certificate
active
07339236
ABSTRACT:
The present invention provides a semiconductor technology capable of suppressing an increase in threshold voltage of a transistor and, also, improving a withstand voltage between a source region and a drain region. Source and drain regions of a p channel type MOS transistor are formed in an n−type semiconductor layer in an SOI substrate. In addition, an n type impurity region is formed in the semiconductor layer. The impurity region is formed over the entire bottom of the source region at a portion directly below this source region, and is also formed directly below the semiconductor layer between the source region and the drain region. A peak position of an impurity concentration in the impurity region is set below a lowest end of the source region at a portion directly below an upper surface of the semiconductor layer between the source region and the drain region.
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Nitta Tetsuya
Yamamoto Fumitoshi
Yamashita Yasunori
Yanagi Shinichiro
Quach T. N.
Renesas Technology Corp.
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