Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2005-06-16
2008-03-11
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C438S233000, C438S523000, C438S694000, C438S700000, C438S723000
Reexamination Certificate
active
07341931
ABSTRACT:
Contact areas comprising doped semiconductor material at the bottom of contact holes are cleaned in a hot hydrogen plasma and exposed in situ during and/or separately from the hot hydrogen clean to a plasma containing the same dopant species as in the semiconductor material so as to partially, completely, or more than completely offset any loss of dopant due to the hot hydrogen clean. A protective conductive layer such as a metal silicide is then formed over the contact area in situ. The resulting integrated circuit has contacts with interfaces such as a silicide interfaces to contact areas having a particularly favorable dopant profile and concentration adjacent the silicide interfaces.
REFERENCES:
patent: 6020254 (2000-02-01), Taguwa
patent: 6093629 (2000-07-01), Chen
patent: 6921708 (2005-07-01), Sharan et al.
Wolf et al., Silicon Processing for the VLSI Era, vol. 1: Process Technology, 1986 by Lattice Press, pp. 283-286.
Sandhu Gurtej S.
Sharan Sujit
Fourson George
Maldonado Julio J.
Micro)n Technology, Inc.
Williams Morgan & Amerson P.C.
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