Nitride semiconductor device

Details Nitride semiconductor device Nitride semiconductor device

2006-04-26

2008-09-16

Ho, Tu-Tu V (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular semiconductor material

C257SE33008, C257S014000

Reexamination Certificate

active

07425732

ABSTRACT:
A nitride semiconductor device includes an active layer including a first nitride semiconductor layer and a second nitride semiconductor layer which are periodically stacked, the second nitride semiconductor layer having a different composition from a composition of the first nitride semiconductor layer. An energy at a lower edge of a conduction band in the first nitride semiconductor layer is lower than an energy at a lower edge of a conduction band in the second nitride semiconductor layer, and an energy at an upper edge of a valence band in the first nitride semiconductor layer is lower than an energy at an upper edge of a valence band in the second nitride semiconductor layer.

REFERENCES:
patent: 6625187 (2003-09-01), Ikoma et al.
patent: 2002/0195606 (2002-12-01), Edmond et la.
patent: 2006/0091404 (2006-05-01), Shen et al.
patent: 06-314822 (1994-11-01), None
patent: 2003-158337 (2003-05-01), None
patent: 2004-134787 (2004-04-01), None
Chichibu et al., “Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures”, Applied Physics Letters 73 (1998) pp. 2006-2008.

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