Static information storage and retrieval – Systems using particular element – Flip-flop
Reexamination Certificate
2004-03-31
2008-09-09
Phan, Trong (Department: 2827)
Static information storage and retrieval
Systems using particular element
Flip-flop
C365S156000, C365S226000, C365S227000
Reexamination Certificate
active
07423899
ABSTRACT:
A SRAM device is provided having a plurality of memory cells. Each memory cell may include a plurality of transistors coupled in a cross-coupled inverter configuration. An NMOS transistor may be coupled to a body of the two PMOS transistors in the cross-coupled inverter configuration so as to apply a forward body bias to the PMOS transistors of the cross-coupled inverter configuration. A power control unit may control a supply voltage to each of the PMOS transistors as well as apply the switching signal to the NMOS transistor based on a STANDBY mode of the memory cell.
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De Vivek K.
Khellah Muhammad M.
Somasekhar Dinesh
Tang Stephen H.
Tschanz James W.
Ked & Associates LLP
Phan Trong
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