Method for manufacturing a through conductor

Details Method for manufacturing a through conductor Method for manufacturing a through conductor

2006-03-24

2008-09-02

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S700000, C438S672000, C257SE21170, C257SE21229, C257SE21231, C257SE21304, C257SE21305

Reexamination Certificate

active

07419906

ABSTRACT:
A method of manufacturing a through conductor that penetrates from an upper surface of a silicon substrate to its lower surface. The through conductor is manufactured in steps which provide a first conductor which extends in the direction of thickness of the silicon substrate from the upper surface of the silicon substrate, and a second conductor which has a size in the direction orthogonal to the thickness direction is smaller than that of the first conductor and which penetrates the silicon substrate from a bottom face of the first conductor to the lower surface of the silicon substrate.

REFERENCES:
patent: 5021842 (1991-06-01), Koyanagi
patent: 5119155 (1992-06-01), Hieda et al.
patent: 5170372 (1992-12-01), Wong
patent: 5302542 (1994-04-01), Kishi et al.
patent: 5618745 (1997-04-01), Kita
patent: 6087719 (2000-07-01), Tsunashima
patent: 10-223833 (1998-08-01), None
patent: 2000-124302 (2000-04-01), None
patent: 2003-007777 (2003-01-01), None
patent: 2004-14657 (2004-01-01), None

Affiliated with

Also associated with

Rating

Method for manufacturing a through conductor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing a through conductor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing a through conductor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3977128