Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-10-21
2008-03-04
Quach, T. N. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S331000, C257S347000, C257SE27060
Reexamination Certificate
active
07339232
ABSTRACT:
A semiconductor device having a multi-bit nonvolatile memory cell is provided. The semiconductor device comprises a multi-bit nonvolatile memory unit cell sharing a source and a drain region and having a plurality of transistors. The plurality of transistors each comprise at least one control gate and at least one charge storage region. The charge storage regions are for accumulating charges within each of the plurality of transistors of the memory unit cell. Each of the control gates are connected to at least one control voltage to shift a threshold voltage in each of the plurality of transistors for storing multi-bit per unit cell.
REFERENCES:
patent: 6052310 (2000-04-01), Sunkavalli
patent: 6275415 (2001-08-01), Haddad et al.
patent: 6306708 (2001-10-01), Peng
patent: 6580124 (2003-06-01), Cleeves et al.
patent: 2003/0146465 (2003-08-01), Wu
patent: 2006/0226468 (2006-10-01), Zheng
patent: 2007/0141781 (2007-06-01), Park et al.
patent: 8-23040 (1996-01-01), None
patent: 10-2003-0065864 (2003-08-01), None
Jeon Hee-Seog
Kang Sung-Taeg
Seo Bo-Young
F. Chau & Associates LLC.
Quach T. N.
LandOfFree
Semiconductor device having multi-bit nonvolatile memory... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device having multi-bit nonvolatile memory..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having multi-bit nonvolatile memory... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3976516