Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

2004-12-10

2008-09-16

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S183000

Reexamination Certificate

active

07425478

ABSTRACT:
A semiconductor device and a method of fabricating the semiconductor device are described. There is provided the semiconductor device including, a semiconductor substrate, a gate insulating layer on the semiconductor substrate, a two-step gate electrode formed on the gate insulating layer, the two-step gate electrode having a first gate electrode layer formed on the gate insulating layer and a second gate electrode layer formed on the first gate electrode layer, the gate length of the second gate electrode layer being longer than that of the first gate electrode layer, extension regions formed in the semiconductor substrate to interpose a channel region of the semiconductor substrate beneath the second gate electrode layer, and source-drain regions formed in the outside of the extension regions toward the channel region, the source-drain regions adjoining the extension regions.

REFERENCES:
patent: 4923823 (1990-05-01), Kohno
patent: 5093274 (1992-03-01), Kohno
patent: 6054355 (2000-04-01), Inumiya et al.
patent: 6515320 (2003-02-01), Azuma et al.
patent: 6524901 (2003-02-01), Trivedi
patent: 6927110 (2005-08-01), Kanemoto
patent: 6977228 (2005-12-01), Kohyama et al.
patent: 7078284 (2006-07-01), Trivedi
patent: 2002/0011629 (2002-01-01), Chan et al.
patent: 2004/0132237 (2004-07-01), Kanemoto
patent: 2003-332567 (2003-11-01), None

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