Semiconductor device with a gate electrode having a laminate...

Details Semiconductor device with a gate electrode having a laminate... Semiconductor device with a gate electrode having a laminate...

2006-01-11

2008-09-30

Pizarro, Marcos D. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S004000, C257SE21204, C257SE29160

Reexamination Certificate

active

07429777

ABSTRACT:
A semiconductor device includes a semiconductor substrate having a semiconductor layer, a gate electrode, a source region, a drain region, an element separation insulating film layer and a wiring. The gate electrode include a laminated structure having a gate insulating film formed on the semiconductor layer, a metal or a metallic compound formed on the gate insulating film and a polycrystalline silicon layer formed on the metal or metallic compound. The source region and drain region are formed on a surface portion of the semiconductor substrate and sandwich the gate electrode therebetween. The element separation insulating film layer surrounds the semiconductor layer. The wiring is in contact with the metal or metallic compound of the gate electrode.

REFERENCES:
patent: 5854114 (1998-12-01), Li et al.
patent: 6020024 (2000-02-01), Maiti et al.
patent: 6696345 (2004-02-01), Chau et al.
patent: 57-48268 (1982-03-01), None
patent: 5-206461 (1993-08-01), None
patent: 11-17165 (1999-01-01), None
patent: 11-126902 (1999-05-01), None
Notification of Reason fro Refusal issued by the Japanese Patent Office on Nov. 27, 2007, for Japanese Patent Application No. 2005-051355, and English-language translation thereof.

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