Memory device including a plurality of capacitors

Details Memory device including a plurality of capacitors Memory device including a plurality of capacitors

2006-12-14

2008-09-23

Le, Thong Q (Department: 2827)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S117000, C365S065000

Reexamination Certificate

active

07428162

ABSTRACT:
A memory device including: a lower electrode; a ferroelectric layer formed above the lower electrode; a charge compensation layer formed above the ferroelectric layer and including an oxide having a composition differing from a composition of the ferroelectric layer; and upper electrodes formed above the charge compensation layer. The upper electrodes includes: a saturated polarization forming electrode used for forming a domain polarized to saturation in a predetermined direction in a predetermined region of the ferroelectric layer; a writing electrode disposed apart from the saturated polarization forming electrode; and a reading electrode disposed apart from the writing electrode.

REFERENCES:
patent: 4972370 (1990-11-01), Morimoto et al.
patent: 5751037 (1998-05-01), Aozasa et al.

Affiliated with

Also associated with

Rating

Memory device including a plurality of capacitors does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Memory device including a plurality of capacitors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory device including a plurality of capacitors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3972863