Technique for enhancing stress transfer into channel regions...

Details Technique for enhancing stress transfer into channel regions... Technique for enhancing stress transfer into channel regions...

2006-08-30

2008-03-18

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S197000, C438S597000, C438S649000, C438S664000, C257S734000, C257SE21640, C257SE21634, C257SE21438, C257SE21636

Reexamination Certificate

active

07344984

ABSTRACT:
A method and a semiconductor device are provided in which respective contact layers having a specific intrinsic stress may be directly formed on respective metal silicide regions without undue metal silicide degradation during an etch process for removing an unwanted portion of an initially deposited contact layer. Moreover, due to the inventive concept, the strain-inducing contact layers may be formed directly on the respective substantially L-shaped spacer elements, thereby enhancing even more the stress transfer mechanism.

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patent: 2004/0113217 (2004-06-01), Chidambarrao et al.
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patent: 2007/0040225 (2007-02-01), Yang

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