Magnetoresistive memory using large fractions of memory cell fil

Details Magnetoresistive memory using large fractions of memory cell fil Magnetoresistive memory using large fractions of memory cell fil

1995-01-05

1997-06-03

Nelms, David C.

Static information storage and retrieval

Systems using particular element

Magnetoresistive

365173, G11C 1115

Patent

active

056361599

ABSTRACT:
A digital memory having a plurality of locations where selectively coincident currents can be selected to flow in a pair of wordline structures, or with a wordline structure paired with a composite line structure (and possibly a bit line structure), to continue an existing, or switch to an opposite, edge magnetization state in a composite line structure or, alternatively, continue or switch a magnetization state in a storage film cell used to magnetically bias such a composite line structure.

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