Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-03-30
2008-09-02
Lee, Eugene (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S328000, C257S355000, C257S546000
Reexamination Certificate
active
07420255
ABSTRACT:
A semiconductor device provided with stable ESD protection capabilities, incorporating a transistor and a protective diode to form a power control IC. The semiconductor device includes a semiconductor substrate of a first conductivity type; a well region of a second conductivity type, formed in the semiconductor substrate; the transistor formed in the well region; a guard ring region of the second conductivity type having an impurity concentration higher than the well region, formed on the surface of the semiconductor substrate inside the periphery of, and spatially separated from the boundary of, the well region; a substrate pickup region of the first conductivity type having an impurity concentration higher than the semiconductor substrate, formed on the periphery of the well region in contact with the well region and the semiconductor substrate; and a thick oxide film formed on the surface of the semiconductor substrate between the guard ring region and the substrate pickup region. The protective diode is formed including the well region, the guard ring region, and the substrate pickup region.
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