Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reissue Patent
2004-08-20
2008-01-22
Berman, Jack I. (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S492200, C250S3960ML, C250S492300
Reissue Patent
active
RE040009
ABSTRACT:
Methods and apparatus for implanting ions in a workpiece, such as a semiconductor wafer, include generating an ion beam, measuring parallelism of the ion beam, adjusting the ion beam for a desired parallelism based on the measured parallelism, measuring a beam direction of the adjusted ion beam, orienting a workpiece at an implant angle referenced to the measured beam direction and performing an implant with the workpiece oriented at the implant angle referenced to the measured beam direction. The implant may be performed with a high degree of beam parallelism.
REFERENCES:
patent: 4021675 (1977-05-01), Shifrin
patent: 4922106 (1990-05-01), Berrian et al.
patent: 5126575 (1992-06-01), White
patent: 5180918 (1993-01-01), Isobe
patent: 5350926 (1994-09-01), White et al.
patent: 5422490 (1995-06-01), Nakamura et al.
patent: 5641969 (1997-06-01), Cooke et al.
patent: 5757018 (1998-05-01), Mack et al.
patent: 5834786 (1998-11-01), White et al.
patent: 6160262 (2000-12-01), Aoki et al.
patent: 6163033 (2000-12-01), Smick et al.
patent: 6255662 (2001-07-01), Rubin et al.
patent: 6313474 (2001-11-01), Iwasawa et al.
patent: 6566661 (2003-05-01), Mitchell
patent: 6573518 (2003-06-01), Renau et al.
patent: 6791094 (2004-09-01), Olson et al.
patent: 0 926 699 (1999-06-01), None
patent: 0 975 004 (2000-01-01), None
patent: 03017949 (1991-01-01), None
patent: 20011229873 (2001-08-01), None
patent: WO 99/13488 (1999-03-01), None
patent: WO 01/04926 (2001-01-01), None
patent: WO 01/27968 (2001-04-01), None
Olson J.C. et al., “Control of channeling uniformity for advanced applications”, 2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology—2000 (Cat. No. 00EX432), Alpbach, Aus., pp. 670-673, XP002200390, 2000, Piscataway, NJ, IEEE, ISBN:0-7803-6462-7.
International Search Report mailed Mar. 28, 2002 for International Patent Application No. PCT/US01/22392 with an International filing date of Jul. 13, 2001.
Olson Joseph C.
Renau Anthony
Berman Jack I.
Varian Semiconductor Equipment Associates Inc.
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