Method for forming fine pattern of semiconductor device

Details Method for forming fine pattern of semiconductor device Method for forming fine pattern of semiconductor device

2006-12-28

2008-01-01

Deo, Duy-Vu N (Department: 1765)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

C438S717000, C438S725000

Reexamination Certificate

active

07314810

ABSTRACT:
A method for forming fine patterns of a semiconductor device includes forming hard mask patterns over an underlying layer. A first organic film is formed over the hard mask patterns. A second organic film is formed over the first organic film. The second organic film is planarized until the first organic film is exposed. An etch-back process is performed on the first organic film until the underlying layer is exposed. The first organic film and the second organic film are etched to form organic mask patterns including the first organic film and the second organic film. Each organic mask pattern is formed between adjacent hard mask patterns. The underlying layer is etched using the hard mask patterns and the organic mask patterns as an etching mask to form an underlying layer pattern.

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