Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

2006-02-17

2008-03-11

Tran, Binh X. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S717000, C438S720000, C438S736000, C438S742000

Reexamination Certificate

active

07341955

ABSTRACT:
A method for fabricating a semiconductor device is provided. The method includes: forming an insulation layer over a substrate; forming a hard mask layer over the insulation layer; forming a photoresist pattern over the hard mask layer; forming a polymer over the photoresist pattern to increase a thickness of the photoresist pattern; patterning the hard mask layer by using the photoresist pattern having the increased thickness; and selectively removing the insulation layer by using the photoresist pattern having the increased thickness and the hard mask layer as an etch mask to form a contact hole.

REFERENCES:
patent: 7064078 (2006-06-01), Liu et al.
patent: 2004/0092098 (2004-05-01), Sudijono et al.
patent: 2006/0154477 (2006-07-01), Geng et al.
patent: 2001-0065794 (2001-07-01), None
patent: 10-0327346 (2002-02-01), None
patent: 10-2005-0108210 (2005-11-01), None

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