Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-09-11
2008-07-01
Doan, Theresa T (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S484000, C257S758000
Reexamination Certificate
active
07394137
ABSTRACT:
A semiconductor device including: a semiconductor layer; a gate insulating layer; a gate electrode; a channel region; a source region and a drain region; a guard ring region; an offset insulating layer; a first interlayer dielectric; a first shield layer formed above the first interlayer dielectric and the guard ring region and electrically connected to the guard ring region; a second interlayer dielectric; and a second shield layer formed above the second interlayer dielectric, wherein the first shield layer is provided outside of both ends of the gate electrode in a channel width direction when viewed from the top side; and wherein the second shield layer is provided in at least part of a first region and/or at least part of a second region, the first region being a region between one edge of the gate electrode and an edge of the first shield layer opposite to the edge of the gate electrode in the channel width direction when viewed from the top side, and the second region being a region between the other edge of the gate electrode and an edge of the first shield layer opposite to the other edge of the gate electrode in the channel width direction when viewed from the top side.
REFERENCES:
patent: 5898206 (1999-04-01), Yamamoto
patent: 6929994 (2005-08-01), Hayashi
patent: 2002/0167091 (2002-11-01), Iwasaki et al.
patent: 2001-250921 (2001-09-01), None
patent: 2003-258120 (2003-09-01), None
Akiba Takahisa
Hayashi Masahiro
Kenmochi Susumu
Takaso Tomo
Watanabe Kunio
Doan Theresa T
Harness & Dickey & Pierce P.L.C.
Seiko Epson Corporation
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