Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-07-15
2008-01-01
Smith, Bradley K (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
43, C257SE21586
Reexamination Certificate
active
07314827
ABSTRACT:
A method of manufacturing a semiconductor device according to an aspect of the present invention comprises forming a plated film on a substrate which has a recessed portion on its surface so as to bury in the recessed portion by a plating method; forming over the plated film a compressive stress-applying film which is composed of a material having a thermal expansion coefficient of 60% or less compared with a thermal expansion coefficient of a metal composing the plated film; heat-treating while applying a compressive stress to the plated film by the compressive stress-applying film; and removing the compressive stress-applying film and the plated film which is not buried in the recessed portion.
REFERENCES:
patent: 6429128 (2002-08-01), Besser et al.
patent: 6881666 (2005-04-01), Kawano
patent: 2001/0049190 (2001-12-01), Givens
patent: 2004/0014312 (2004-01-01), Kunishima et al.
patent: 10-032203 (1998-02-01), None
patent: 2004-040022 (2004-02-01), None
First Office Action issued by the Chinese Patent Office on Mar. 23, 2007, for Chinese Patent Application No. 200510105721, and English-language translation thereof.
Hasunuma Masahiko
Ito Sachiyo
Kaneko Hisashi
Toyoda Hiroshi
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
Smith Bradley K
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