SRAM circuitry

Details SRAM circuitry SRAM circuitry

2007-01-08

2008-03-25

Zarabian, Amir (Department: 2827)

Static information storage and retrieval

Systems using particular element

Flip-flop

C365S208000, C365S189110

Reexamination Certificate

active

07349241

ABSTRACT:
A static ram cell is described. The cell includes a pair of cross-coupled transistors and a pair of diode-connected transistors operated from a wordline that provides power to the cell. The cell has three main operating modes, reading, writing, and data retention. Reading is performed by sensing current flowing from a powered-up wordline through a conductive one of the cross-coupled transistors. Writing is performed by pulsing the source of the conductive one of the cross-coupled transistors with a positive voltage to flip the conductive states of the cross-coupled transistors. Data retention is performed by using leakage currents to retain the conductive states of the cross-coupled transistors. A decoder for an array of static ram cells may be operated synchronously and in a pipelined fashion using a rotary traveling wave oscillator that provides the clocks for the pipeline. The cell is capable of detecting an alpha particle strike with suitable circuitry.

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