Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-05-06
2008-05-06
Warren, Matthew E. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S331000, C257S334000, C257SE29257, C257SE29260
Reexamination Certificate
active
11230492
ABSTRACT:
A semiconductor device includes a semiconductor substrate of a first conductivity type, a lightly-doped semiconductor layer of the first conductivity type formed on the first major surface of the substrate, a first semiconductor region of the first conductivity type formed on an island-shaped region on the lightly-doped semiconductor layer, a first electrode surrounding the first semiconductor region and buried at a deeper position than the first semiconductor region, a second semiconductor region formed on the second major surface of the substrate, a buried field relaxation layer formed in the lightly-doped semiconductor layer between a bottom surface of the first electrode and the second semiconductor region, including a first field relaxation layer of the first conductivity type and second field relaxation layers of the second conductivity type formed at two ends of the first field relaxation layer, second and third electrodes formed on the first and second semiconductor regions, respectively.
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patent: 7132712 (2006-11-01), Kocon et al.
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Mizukami Makoto
Shinohe Takashi
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Warren Matthew E.
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