Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2008-01-22
2008-01-22
Tran, Minh-Loan (Department: 2826)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S708000, C438S508000
Reexamination Certificate
active
10922343
ABSTRACT:
A method of manufacturing a thin film transistor array panel is provided, which includes: forming a gate line on a substrate; depositing a gate insulating layer and a semiconductor layer in sequence on the gate line; depositing a lower conductive film and an upper conductive film on the semiconductor layer; photo-etching the upper conductive film, the lower conductive film, and the semiconductor layer; depositing a passivation layer; photo-etching the passivation layer to expose first and second portions of the upper conductive film; removing the first and the second portions of the upper conductive film to expose first and second portions of the lower conductive film; forming a pixel electrode on the first portion of the lower conductive film; removing the second portion of the lower conductive film to expose a portion of the semiconductor layer; and forming a columnar spacer on the exposed portion of the semiconductor layer.
REFERENCES:
patent: 6287899 (2001-09-01), Park et al.
patent: 6555409 (2003-04-01), Kim et al.
patent: 7023016 (2006-04-01), Lee et al.
patent: 2006/0209223 (2006-09-01), Choi et al.
patent: 2006/0289965 (2006-12-01), Park et al.
Baek Bum-Ki
Choi Kwon-Young
Jeon Sang-Jin
Kwak Sang-Ki
Lee Jeong-Young
MacPherson Kwok & Chen & Heid LLP
Tran Minh-Loan
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