Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Reexamination Certificate
2008-09-16
2008-09-16
Pert, Evan (Department: 2826)
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
C438S763000, C438S785000
Reexamination Certificate
active
11059449
ABSTRACT:
A capacitor including a dielectric structure, a lower electrode may be formed on a substrate. The dielectric structure may be formed on the lower electrode, and may include a first thin film, which may improve a morphology of the dielectric structure, and a second thin film, which may have at least one of an EOT larger than that of the first thin film and a dielectric constant higher than that of the first thin film. An upper electrode may be formed on the dielectric structure, and the dielectric structure may have an improved morphology and/or a higher dielectric constant.
REFERENCES:
patent: 6124162 (2000-09-01), Lin
patent: 6207528 (2001-03-01), Lee
patent: 6270572 (2001-08-01), Kim et al.
patent: 6319730 (2001-11-01), Ramdani et al.
patent: 6348386 (2002-02-01), Gilmer
patent: 6407435 (2002-06-01), Ma et al.
patent: 6420279 (2002-07-01), Ono et al.
patent: 6660660 (2003-12-01), Haukka et al.
patent: 6709989 (2004-03-01), Ramdani et al.
patent: 6753618 (2004-06-01), Basceri et al.
patent: 2002/0153579 (2002-10-01), Yamamoto
patent: 2002/0190294 (2002-12-01), Iizuka et al.
patent: 2004/0012043 (2004-01-01), Gealy et al.
patent: 10-2001-0082118 (2001-08-01), None
patent: 2002-0063525 (2002-08-01), None
patent: 10-2004-0016779 (2004-02-01), None
patent: 10-2004-0060443 (2004-07-01), None
patent: 1020040084700 (2004-10-01), None
Hausmann et al., “Atomic Layer Deposition of Hafnium and Zirconium Oxides Using Metal Amide Precursors”, Sep. 2002, American Chemical Society, Chem. Mater. No. 14, pp. 4350-4358.
Korean Office Action dated May 11, 2005.
Choi Dae-Sik
Choi Han-Mei
Kim Sung-Tae
Kim Young-Sun
Lee Seung-Hwan
Harness & Dickey & Pierce P.L.C.
Pert Evan
Samsung Electronics Co,. Ltd.
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