Semiconductor device having two-layered charge storage...

Details Semiconductor device having two-layered charge storage... Semiconductor device having two-layered charge storage...

2008-09-02

2008-09-02

Vu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

C257SE21548, C438S427000

Reexamination Certificate

active

11373982

ABSTRACT:
A first insulation film, a first conductor film, and a cap are sequentially formed on a semiconductor substrate. The first insulation film, the first conductor film, and the cap, and the substrate are etched in the same pattern. A second insulation film is placed in that etched pattern. The cap is removed. A second conductor film is formed on the side face of the second insulation film.

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