Static information storage and retrieval – Read/write circuit – Bad bit
Reexamination Certificate
2008-05-13
2008-05-13
Nguyen, Tuan T. (Department: 2824)
Static information storage and retrieval
Read/write circuit
Bad bit
C365S189070, C365S230030, C365S189040
Reexamination Certificate
active
11274059
ABSTRACT:
In a method for repairing a memory component, data retention times of regular memory cells are determined. Weak regular memory cells having a data retention time that is shorter than a predetermined limit value are determined. A device is programmed in such a manner that a write or read access to the weak regular memory cell is simultaneously also effected for a redundant memory cell in order to jointly read from, or write to, the weak regular memory cell and the redundant memory cell.
REFERENCES:
patent: 5619460 (1997-04-01), Kirihata et al.
patent: 5909404 (1999-06-01), Schwarz
patent: 6272054 (2001-08-01), Barth, Jr. et al.
patent: 6417476 (2002-07-01), Offer et al.
patent: 6584022 (2003-06-01), Tsuji
patent: 6707730 (2004-03-01), Mori et al.
patent: 6714476 (2004-03-01), Hsu et al.
patent: 0335149 (1989-10-01), None
Infineon - Technologies AG
Nguyen Tuan T.
Patterson & Sheridan L.L.P.
LandOfFree
Methods for repairing and for operating a memory component does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Methods for repairing and for operating a memory component, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods for repairing and for operating a memory component will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3956404