Thin film transistor and method of manufacturing the same

Details Thin film transistor and method of manufacturing the same Thin film transistor and method of manufacturing the same

2008-09-23

2008-09-23

Schillinger, Laura M (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S166000, C438S151000

Reexamination Certificate

active

11859174

ABSTRACT:
A method of manufacturing a thin film transistor includes: forming an amorphous silicon layer and a blocking layer; forming a photoresist layer having first and second photoresist patterns spaced apart from each other on the blocking layer; etching the blocking layer using the first photoresist pattern as a mask to form first and second blocking patterns; reflowing the photoresist layer so the first and second photoresist patterns abut each other; forming a capping layer and a metal layer; removing the photoresist layer to expose the blocking layer and an offset region between the blocking layer and the metal layer; crystallizing the amorphous silicon layer by diffusing metals in the metal layer through the capping layer; etching the poly silicon layer using the first and second blocking patterns as a mask to form first and second semiconductor layers; and removing the first and second blocking patterns.

REFERENCES:
patent: 4997780 (1991-03-01), Szluk et al.
patent: 5451766 (1995-09-01), Van Berkel
patent: 5728592 (1998-03-01), Oki et al.
patent: 5904509 (1999-05-01), Zhang et al.
patent: 5994173 (1999-11-01), Oki et al.
patent: 6097037 (2000-08-01), Joo et al.
patent: 6130456 (2000-10-01), Oki et al.
patent: 6218220 (2001-04-01), So
patent: 6396147 (2002-05-01), Adachi et al.
patent: 6514803 (2003-02-01), Arai et al.
patent: 6521491 (2003-02-01), Lee et al.
patent: 6586287 (2003-07-01), Joo et al.
patent: 6706573 (2004-03-01), So
patent: 6809785 (2004-10-01), Fujino
patent: 6939754 (2005-09-01), Moriguchi et al.
patent: 6975375 (2005-12-01), Fujino
patent: 7112475 (2006-09-01), So
patent: 7208352 (2007-04-01), So
patent: 7288444 (2007-10-01), So
patent: 7294537 (2007-11-01), So
patent: 2001/0005596 (2001-06-01), Lee et al.
patent: 2002/0058365 (2002-05-01), Lee et al.
patent: 2002/0068390 (2002-06-01), Gosain et al.
patent: 2002/0146869 (2002-10-01), So
patent: 2002/0158994 (2002-10-01), Hashimoto et al.
patent: 2002/0176029 (2002-11-01), Fujino
patent: 2003/0032210 (2003-02-01), Takayama et al.
patent: 2003/0169382 (2003-09-01), Fujino
patent: 2004/0175871 (2004-09-01), So
patent: 2005/0090046 (2005-04-01), So
patent: 2005/0140869 (2005-06-01), Yang et al.
patent: 2005/0230348 (2005-10-01), Kido
patent: 2006/0278606 (2006-12-01), Park et al.
patent: 2008/0064151 (2008-03-01), So
patent: 1155166 (1997-07-01), None
Kim, Tae-Kyung, et al., “The effects of electrical stress and temperature on the properties of polycrystalline silicon thin-film transistors fabricated by metal induced lateral crystallization”, IEEE Electron Device Letters, vol. 21, No. 7, Jul. 2000, p. 347-349.

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