Methods for generating a reference voltage and for reading a...

Details Methods for generating a reference voltage and for reading a... Methods for generating a reference voltage and for reading a...

2008-03-11

2008-03-11

Nguyen, Tan T. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S189090, C365S210130

Reexamination Certificate

active

11368266

ABSTRACT:
A method and a circuit configuration for generating a reference voltage in a resistive semiconductor memory includes generating a reference voltage by connecting together two bitlines having different voltages. This method for generating a reference voltage can be used in a method and in a circuit configuration for reading at least one memory cell of a resistive memory cell array in a semiconductor memory. The generated reference voltage and a voltage dependent on the content of a resistive memory cell are applied to an amplifier to determine the content of the memory cell. The content of the memory cell is determined dependent on a relationship between the reference voltage and the voltage dependent on the content of the memory cell.

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Symanczyk, R., et al., “Electrical Characterization of Solid State Ionic Memory Elements,” Proceedings of the Non-Volatile Memory Technology Symposium 2003, 7 pages.

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