Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2008-01-29
2008-01-29
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S226000
Reexamination Certificate
active
11170874
ABSTRACT:
An integrated circuit device includes a magnetic random access memory (“MRAM”) architecture and a smart power integrated circuit architecture formed on the same substrate using the same fabrication process technology. The fabrication process technology is a modular process having a front end process and a back end process. In the example embodiment, the smart power architecture includes a power circuit component, a digital logic component, and an analog control component formed by the front end process, and a sensor architecture formed by the back end process. The MRAM architecture includes an MRAM circuit component formed by the front end process and an MRAM cell array formed by the back end process. In one practical embodiment, the sensor architecture includes a sensor component that is formed from the same magnetic tunnel junction core material utilized by the MRAM cell array. The concurrent fabrication of the MRAM architecture and the smart power architecture facilitates an efficient and cost effective use of the physical space available over active circuit blocks of the substrate, resulting in three-dimensional integration.
REFERENCES:
patent: 5940319 (1999-08-01), Durlam et al.
patent: 6771538 (2004-08-01), Shukuri et al.
patent: 6925000 (2005-08-01), Sussner
patent: 2004/0207035 (2004-10-01), Witcraft et al.
Baird Robert W.
Chung Young Sir
Durlam Mark A.
Grynkewich Gregory W.
Salter Eric J.
Freescale Semiconductor Inc.
Hoang Huan
Ingrassia Fisher & Lorenz P.C.
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