Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-04-08
2008-04-08
Smith, Zandra V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29145, C438S233000, C438S586000, C438S607000
Reexamination Certificate
active
11480667
ABSTRACT:
A system or apparatus including an N-type transistor structure including a gate electrode formed on a substrate and source and drain regions formed in the substrate; a contact to the source region; and a pinning layer disposed between the source region and the first contact and defining an interface between the pinning layer and the source region, wherein the pinning layer has donor-type surface states in a conduction band. A method including forming a transistor structure including a gate electrode on a substrate and source and drain regions formed in the substrate; depositing a pinning layer having donor-type surface states on the source and drain regions such that an interface is defined between the pinning layer and the respective one of the source and drain regions; and forming a first contact to the source region and a second contact to the drain region.
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Chau Robert S.
Datta Suman
Doczy Mark L.
Kavalieros Jack T.
Blakely , Sokoloff, Taylor & Zafman LLP
Intel Corporation
Smith Zandra V.
Thomas Toniae M
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