Semiconductor constructions

Details Semiconductor constructions Semiconductor constructions

2008-05-13

2008-05-13

Le, Thao P. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

Reexamination Certificate

active

11591254

ABSTRACT:
The invention includes a method of depositing a noble metal. A substrate is provided. The substrate has a first region and a second region. The first and second regions are exposed to a mixture comprising a precursor of a noble metal and an oxidant. During the exposure, a layer containing the noble metal is selectively deposited onto the first region relative to the second region. In particular applications, the first region can comprise borophosphosilicate glass, and the second region can comprise either aluminum oxide or doped non-oxidized silicon. The invention also includes capacitor constructions and methods of forming capacitor constructions.

REFERENCES:
patent: 3653947 (1972-04-01), Kandler et al.
patent: 6022775 (2000-02-01), Tsai et al.
patent: 6518198 (2003-02-01), Klein
patent: 6727540 (2004-04-01), Divakaruni et al.
patent: 7141847 (2006-11-01), Srividya et al.
patent: 2003/0203508 (2003-10-01), Yates et al.
patent: 2004/0071879 (2004-04-01), Callegari et al.

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