Method and memory circuit for operating a resistive memory cell

Details Method and memory circuit for operating a resistive memory cell Method and memory circuit for operating a resistive memory cell

2008-09-23

2008-09-23

Dinh, Son (Department: 2824)

Static information storage and retrieval

Systems using particular element

Resistive

C365S100000, C365S189011

Reexamination Certificate

active

11459289

ABSTRACT:
The invention relates to a method for reading a memory datum from a resistive memory cell comprising a selection transistor which is addressable via a control value, the method comprising detecting a cell current flowing through the resistive memory cell, setting the control value depending on the detected cell current, and providing an information associated to the control value as a memory datum.

REFERENCES:
patent: 5881007 (1999-03-01), Jeong et al.
patent: 6795359 (2004-09-01), Baker
patent: 2004/0008555 (2004-01-01), Baker
patent: 2004/0240294 (2004-12-01), Baker
patent: 2004/0264244 (2004-12-01), Morimoto
patent: 2006/0126413 (2006-06-01), Liaw
patent: 2006/0209585 (2006-09-01), Tanizaki et al.
patent: 2006/0227598 (2006-10-01), Sakimura et al.

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